The reliability study of III-V solar cell with copper based contacts

Ching Hsiang Hsu; Edward Yi Chang; Hsun Jui Chang; Jer Shen Maa; Krishna Pande

doi:10.1016/j.sse.2015.09.017

The reliability study of III-V solar cell with copper based contacts

Ching Hsiang Hsu, Edward Yi Chang^*, Hsun Jui Chang, Jer Shen Maa, Krishna Pande

^*Corresponding author for this work

Research output: Contribution to journal › Letter › peer-review

3 Scopus citations

Abstract

The reliability of III-V solar cell with copper based contacts as low-cost metallurgy option for solar cells including Cu-based Cu/Ge/Pd contact on n-type GaAs and Cu/Pt/Ti/Pt contact on p-type Ge is studied in this paper. The Cu-based contacts have low specific contact resistances of the order of 10^-6 ω cm². The solar cells with the proposed Cu-based structures were subjected to high-temperature annealing (250 °C) and a high DC current (6.5 × 10^-4 mA/μm²) stress test. Overall, the solar cell adopting these Cu based contacts remained quite stable and demonstrated excellent performances after these reliability tests.

Original language	English
Pages (from-to)	174-177
Number of pages	4
Journal	Solid-State Electronics
Volume	114
DOIs	https://doi.org/10.1016/j.sse.2015.09.017
State	Published - 1 Dec 2015

Keywords

Copper metallization
III-V concentrator solar cell
Low cost
Reliability

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title = "The reliability study of III-V solar cell with copper based contacts",

abstract = "The reliability of III-V solar cell with copper based contacts as low-cost metallurgy option for solar cells including Cu-based Cu/Ge/Pd contact on n-type GaAs and Cu/Pt/Ti/Pt contact on p-type Ge is studied in this paper. The Cu-based contacts have low specific contact resistances of the order of 10-6 ω cm2. The solar cells with the proposed Cu-based structures were subjected to high-temperature annealing (250 °C) and a high DC current (6.5 × 10-4 mA/μm2) stress test. Overall, the solar cell adopting these Cu based contacts remained quite stable and demonstrated excellent performances after these reliability tests.",

keywords = "Copper metallization, III-V concentrator solar cell, Low cost, Reliability",

author = "Hsu, {Ching Hsiang} and Chang, {Edward Yi} and Chang, {Hsun Jui} and Maa, {Jer Shen} and Krishna Pande",

year = "2015",

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doi = "10.1016/j.sse.2015.09.017",

language = "English",

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journal = "Solid-State Electronics",

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T1 - The reliability study of III-V solar cell with copper based contacts

AU - Hsu, Ching Hsiang

AU - Chang, Edward Yi

AU - Chang, Hsun Jui

AU - Maa, Jer Shen

AU - Pande, Krishna

PY - 2015/12/1

Y1 - 2015/12/1

N2 - The reliability of III-V solar cell with copper based contacts as low-cost metallurgy option for solar cells including Cu-based Cu/Ge/Pd contact on n-type GaAs and Cu/Pt/Ti/Pt contact on p-type Ge is studied in this paper. The Cu-based contacts have low specific contact resistances of the order of 10-6 ω cm2. The solar cells with the proposed Cu-based structures were subjected to high-temperature annealing (250 °C) and a high DC current (6.5 × 10-4 mA/μm2) stress test. Overall, the solar cell adopting these Cu based contacts remained quite stable and demonstrated excellent performances after these reliability tests.

AB - The reliability of III-V solar cell with copper based contacts as low-cost metallurgy option for solar cells including Cu-based Cu/Ge/Pd contact on n-type GaAs and Cu/Pt/Ti/Pt contact on p-type Ge is studied in this paper. The Cu-based contacts have low specific contact resistances of the order of 10-6 ω cm2. The solar cells with the proposed Cu-based structures were subjected to high-temperature annealing (250 °C) and a high DC current (6.5 × 10-4 mA/μm2) stress test. Overall, the solar cell adopting these Cu based contacts remained quite stable and demonstrated excellent performances after these reliability tests.

KW - Copper metallization

KW - III-V concentrator solar cell

KW - Low cost

KW - Reliability

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