Abstract
The reliability of III-V solar cell with copper based contacts as low-cost metallurgy option for solar cells including Cu-based Cu/Ge/Pd contact on n-type GaAs and Cu/Pt/Ti/Pt contact on p-type Ge is studied in this paper. The Cu-based contacts have low specific contact resistances of the order of 10-6 ω cm2. The solar cells with the proposed Cu-based structures were subjected to high-temperature annealing (250 °C) and a high DC current (6.5 × 10-4 mA/μm2) stress test. Overall, the solar cell adopting these Cu based contacts remained quite stable and demonstrated excellent performances after these reliability tests.
Original language | English |
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Pages (from-to) | 174-177 |
Number of pages | 4 |
Journal | Solid-State Electronics |
Volume | 114 |
DOIs | |
State | Published - 1 Dec 2015 |
Keywords
- Copper metallization
- III-V concentrator solar cell
- Low cost
- Reliability