The relaxation phenomena of positive charges in thin gate oxide during fowler-nordheim tunneling stress

Kow-Ming Chang*, Chii Horng Li, Shih Wei Wang, Ta Hsun Yeh, Ji Yi Yang, Tzyh Cheang Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

In this study, new relaxation phenomena of positive charges in gate oxide with Fowler-Nordheim (FN) constant current injections have been investigated and characterized. It was found that the magnitudes of applied gate voltage shifts (AVpN) during FN injections, after positive charges relaxed or discharged, have a logarithmic dependence with the relaxation time for both injection polarities. The results can derive the relationship of transient discharging currents, that flow through the oxides after removal of the stress voltage, with the relaxation time. We have shown that the current has a l/t dependence for both injection polarities which can be also derived from the tunneling front model. The effects of oxide fields (lower than the necessary voltage for FN tunneling) and wafer temperatures (373 and 423 K) for the relaxation of positive charges are also studied.

Original languageEnglish
Pages (from-to)1684-1689
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume45
Issue number8
DOIs
StatePublished - 1 Dec 1998

Keywords

  • Fowler-nordheim tunneling
  • Gate oxide
  • Positive charges
  • Stress

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