The reduction and enhancement of spontaneous ordering in (InP)2/(GaP)2 quantum wells grown by solid source molecular beam epitaxy

S. T. Chou*, Y. C. Cheng, K. Tai, Kai-Feng Huang, W. J. Lin, W. H. Lan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We have studied methods for reducing and enhancing the intensity of the spontaneous ordering in the growth of (InP)2/(GaP)2 short-period superlattice (SPS) quantum wells using solid source molecular beam epitaxy. The intensity of the ordering effect can be greatly reduced by using substrates with larger tilt angles or greater height and density of steps on the surface. We believe that the competition between bonding preference and the surface migration ability of group III adatoms plays an important role in this growth mechanism. By using a long growth interruption, we have also demonstrated that the intensity of the spontaneous ordering can be enhanced which gives us the capability to vary the emission energy of (InP)2/(GaP)2 SPS quantum wells and its dependence on temperature.

Original languageEnglish
Pages (from-to)6274-6278
Number of pages5
JournalJournal of Applied Physics
Volume84
Issue number11
DOIs
StatePublished - 1 Dec 1998

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