The recovery mechanism of the light-induced instability of the amorphous InGaZnO thin film transistors

Chao Lung Wang*, Huang-Chung Cheng, Chun Yu Wu, I. Che Lee, Yu-Ting Cheng, Po Yu Yang, Chih Hung Tsai, Chun Hsiang Fang, Chung Chun Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The recovery mechanism of the light-induced instability of amorphous InGaZnO thin-film transistors was examined. Following light illumination, the bare devices displayed more dark recovery of the threshold voltage (V th ) shifts than the ones encapsulated in nitrogen ambient. This was attributed to the adsorption of more oxygen (O 2 ) in the back channel of the bare devices. Further, much more recovery was also observed for the bare devices than the nitrogen-encapsulated ones under positive gate bias. This implied the recovery effect under gate bias could be further enhanced because the induced electrons could greatly increase the adsorption of more O 2 for the bare devices.

Original languageEnglish
Article number212112
JournalApplied Physics Letters
Volume100
Issue number21
DOIs
StatePublished - 21 May 2012

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