The random dopant and gate oxide variations in trigate MOSFETs

Steve S. Chung*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a methodology to investigate the dopant fluctuation and the gate leakage fluctuation of trigate devices via a purely experimental approach. The dopant fluctuation is known to be reduced in a trigate comparing to a planar transistor, while it depends on the Fin-height. Another source of variation is the gate leakage variation caused by the surface roughness effect. Both types of variation create major challenges for putting the trigate into the manufacturing. The method to understand these effects and the experimental procedures will be addressed. A measure of the variation by the Pelgrom plot will be specifically addressed.

Original languageEnglish
Title of host publication2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479923342
DOIs
StatePublished - 13 Mar 2014
Event2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 - Chengdu, China
Duration: 18 Jun 201420 Jun 2014

Publication series

Name2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014

Conference

Conference2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
CountryChina
CityChengdu
Period18/06/1420/06/14

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  • Cite this

    Chung, S. S. (2014). The random dopant and gate oxide variations in trigate MOSFETs. In 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 [7061284] (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2014.7061284