The post-annealing effect on the electrical properties of pentacene thin film transistors

Yin Ting Shih*, Fang-Chung Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study, the effect of post-annealing on the device performance is investigated systematically. X-ray diffraction pattern and images of atomic force microscopy reveal that the pentacene grain grows larger and the grain boundaries reduces after thermal annealing, resulting in the enhancement of device performance and stability.

Original languageEnglish
Title of host publicationIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
Pages709-712
Number of pages4
StatePublished - 1 Dec 2007
EventInternational Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan
Duration: 3 Jul 20076 Jul 2007

Publication series

NameIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC 2007
CountryTaiwan
CityTaipei
Period3/07/076/07/07

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