The polarity dependence of ONO thickness for wrapped-select-gate (WSG) SONOS memory

Kuan Ti Wang*, Tien-Sheng Chao, Woei Cherng Wu, Chao Sung Lai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

2-bits/cell operation characteristics of WSG-SONOS memory has been fully studied in different ONO thickness. The 2-bits/cell characteristics of WSG-SONOS memory will be determined by tunneling oxide and total ONO thicknesses. Besides, thicker top oxide thickness will contribute to better gate disturbance performance while maintaining the same drain disturbance. We also found that the excellent endurance can be performed for the device with thinner tunneling oxide thickness. Optimized ONO thickness for WSG-SONOS memory will be demonstrated in this paper.

Original languageEnglish
Title of host publication17th IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2007
Pages51-54
Number of pages4
DOIs
StatePublished - 1 Dec 2007
Event17th IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2007 - Taipei, Taiwan
Duration: 3 Dec 20075 Dec 2007

Publication series

NameRecords of the IEEE International Workshop on Memory Technology, Design and Testing
ISSN (Print)1087-4852

Conference

Conference17th IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2007
CountryTaiwan
CityTaipei
Period3/12/075/12/07

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