The physical insights into an abnormal erratic behavior in the resistance random access memory

Y. J. Huang, Steve S. Chung, H. Y. Lee, Y. S. Chen, F. T. Chen, P. Y. Gu, M. J. Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

The voltage ramping rate during the forming and set-reset process is strongly related to the formation of soft-breakdown (SBD) paths. In this paper, we examined the effect of two different operation methods in RRAM, including sweep and pulse modes. The RTN analysis has been utilized to examine their influences on the SBD paths. For the first time, we found a different behavior of the RTN currents generated by two different modes of operation. Results show that more SBD paths are created during the pulse mode which led to the instability of switched resistance, and induced the erratic bit during the readout of RRAM.

Original languageEnglish
Title of host publication2013 IEEE International Reliability Physics Symposium, IRPS 2013
DOIs
StatePublished - 7 Aug 2013
Event2013 IEEE International Reliability Physics Symposium, IRPS 2013 - Monterey, CA, United States
Duration: 14 Apr 201318 Apr 2013

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Conference

Conference2013 IEEE International Reliability Physics Symposium, IRPS 2013
CountryUnited States
CityMonterey, CA
Period14/04/1318/04/13

Keywords

  • Multi-level Operation
  • Random Telegraph Noise
  • Resistive Switching Mechanism
  • RRAM
  • Soft-breakdown

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    Huang, Y. J., Chung, S. S., Lee, H. Y., Chen, Y. S., Chen, F. T., Gu, P. Y., & Tsai, M. J. (2013). The physical insights into an abnormal erratic behavior in the resistance random access memory. In 2013 IEEE International Reliability Physics Symposium, IRPS 2013 [6532094] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2013.6532094