The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

G. W. Shu, C. K. Wang, J. S. Wang, J. L. Shen*, R. S. Hsiao, Wu-Ching Chou, Jenn-Fang Chen, T. Y. Lin, C. H. Ko, C. M. Lai

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170K, and then decreases as the temperature increases further above 170K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs.

Original languageEnglish
Article number002
Pages (from-to)5722-5725
Number of pages4
JournalNanotechnology
Volume17
Issue number23
DOIs
StatePublished - 14 Dec 2006

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    Shu, G. W., Wang, C. K., Wang, J. S., Shen, J. L., Hsiao, R. S., Chou, W-C., Chen, J-F., Lin, T. Y., Ko, C. H., & Lai, C. M. (2006). The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers. Nanotechnology, 17(23), 5722-5725. [002]. https://doi.org/10.1088/0957-4484/17/23/002