The performance of GaAs power MESFET's using backside copper metallization

Chang You Chen*, Li Chang, Edward Yi Chang, Szu Houng Chen, Yueh Chin Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The performance of GaAs power MESFET's using backside copper metallization has been evaluated. 10 nm Ta metal was used as the diffusion barrier between GaAs and Cu for copper film metallization in this study. Microstructural characterization shows that the Cu/Ta films with GaAs remained stable up to 400 °C, indicating that Ta is a good diffusion barrier for Cu in GaAs MESFET's. A copper metallized 6 mm power MESFET was thermal stressed to test the device stability. After annealing at 200 °C for 3 h, the devices showed very little degradation in power performance, and the thermal resistance of the device was 65 °C mm/W with 1.4 W/mm DC input power. Results in this study demonstrate that the feasibility of using Cu/Ta films for the backside metallization of GaAs power devices with stable electrical and thermal characteristics.

Original languageEnglish
Pages (from-to)2085-2088
Number of pages4
JournalSolid-State Electronics
Volume46
Issue number12
DOIs
StatePublished - 1 Dec 2002

Keywords

  • Copper metallization
  • GaAs power MESFET
  • Thermal resistance

Fingerprint Dive into the research topics of 'The performance of GaAs power MESFET's using backside copper metallization'. Together they form a unique fingerprint.

Cite this