The performance improvement of N2 plasma treatment on ZrO2 gate dielectric thin-film transistors with atmospheric pressure plasma-enhanced chemical vapor deposition IGZO channel

Chien Hung Wu*, Bo Wen Huang, Kow-Ming Chang, Shui Jinn Wang, Jian Hong Lin, Jui Mei Hsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The aim of this paper is to illustrate the N2 plasma treatment for high-κ ZrO2 gate dielectric stack (30 nm) with indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). Experimental results reveal that a suitable incorporation of nitrogen atoms could enhance the device performance by eliminating the oxygen vacancies and provide an amorphous surface with better surface roughness. With N2 plasma treated ZrO2 gate, IGZO channel is fabricated by atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique. The best performance of the AP-PECVD IGZO TFTs are obtained with 20 W-90 sec N2 plasma treatment with field-effect mobility (μFET) of 22.5 cm2/V-s, subthreshold swing (SS) of 155 mV/dec, and on/off current ratio (Ion/Ioff) of 1.49 × 107.

Original languageEnglish
Pages (from-to)6044-6048
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number6
DOIs
StatePublished - 1 Jun 2016

Keywords

  • AP-PECVD
  • IGZO TFTs
  • N plasma treatment

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