@inproceedings{5a229c37625248c89149775cc1e0078a,
title = "The performance and reliability enhancement of ETOX p-channel Flash EEPROM cell with p-doped floating-gate",
abstract = "In this paper, we proposed a simple approach for designing reliable and high performance p-channel Flash EEPROM cell from the floating-gate engineering point of view. In other words, a p-type doped floating gate used in a p-channel flash cell can achieve this goal. Results show that the programming speed, gate/drain disturb, read lifetime, and data retention in p-type floating-gate cell are much better than those of n-type floating-gate cell; except that p-type floating-gate cell has slower erasing speed. These results can be used as a guideline for designers to choose.",
author = "Tsai, {H. W.} and Chiang, {P. Y.} and Chung, {Steve S.} and Kuo, {D. S.} and Liang, {M. S.}",
year = "2003",
month = jan,
day = "1",
doi = "10.1109/VTSA.2003.1252545",
language = "English",
series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "36--39",
booktitle = "VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings",
address = "United States",
note = "null ; Conference date: 06-10-2003 Through 08-10-2003",
}