The path finding of gate dielectric breakdown in advanced high-k metal-gate CMOS devices

Steve S. Chung*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The breakdown path induced by BTI stress in a MOSFET device can be traced from the experiment. It was demonstrated on advanced high-k metal gate CMOS devices. RTN traps in the dielectric layers can be labeled as a pointer to trace the breakdown path, i.e., from the leakage by measuring the Ig current as a function of time. It was found that breakdown path tends to grow from the interface of HK/IL or IL/Si which is the most defective region. Two types of breakdown paths will be presented. The soft-breakdown path is in a shape like spindle, while the hard breakdown behaves like a snake-walking path. These two breakdown paths are reflected in a two slopes TDDB lifetime plot. These new findings on the breakdown-path formation will be helpful to the understanding of the reliability in HK CMOS devices.

Original languageEnglish
Title of host publicationProceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages360-364
Number of pages5
ISBN (Electronic)9781479983636
DOIs
StatePublished - 30 Sep 2015
Event11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 - Singapore, Singapore
Duration: 1 Jun 20154 Jun 2015

Publication series

NameProceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015

Conference

Conference11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
CountrySingapore
CitySingapore
Period1/06/154/06/15

Keywords

  • BTI
  • hard breakdown
  • high-k
  • Leakage path
  • soft-breakdown
  • TDDB lifetime

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