The parasitic reaction during the MOCVD growth of AlInN material

Wei Ching Huang*, Yuen Yee Wong, Kusan Shin Liu, Chi Feng Hsieh, Edward Yi Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

For observation of parasitic reaction effect during InAlN material growth by Matel-Organic Chemical Vapor Deposition (MOCVD), the growth parameters include temperature and pressure had been varied to investigate it. The pressure would be kept at 50torr, 100torr and 150torr and temperature was varied from 700 °C to 780 °C by 20 °C step in each growth pressure. The experimental results appeared that higher pressure gave rise to more serious parasitic reaction during material growth. It made the less Al atoms incorporate into the AllnN. In addition the 100-torr growth pressure shows the best efficiency of Al atom incorporation compare with other two growth pressures. By the AFM analysis, the morphology of Al0.82In0.18N grown with three different pressures was also examined.

Original languageEnglish
Title of host publication2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings
Pages766-768
Number of pages3
DOIs
StatePublished - 1 Dec 2012
Event2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Kuala Lumpur, Malaysia
Duration: 19 Sep 201221 Sep 2012

Publication series

Name2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings

Conference

Conference2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012
CountryMalaysia
CityKuala Lumpur
Period19/09/1221/09/12

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