The orientation effect of silicon grains on diamond deposition

Yin Hao Su, Li Chang*, Hou Guang Chen, Jhih Kun Yan, Ting Chou

*Corresponding author for this work

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

Diamond deposition on mirror-polished polycrystalline silicon substrates which have grains in various orientations has been investigated using electron backscatter diffraction (EBSD) method with scanning electron microscopy (SEM). Diamond was deposited by microwave plasma chemical vapor deposition with application of a negative bias voltage on the substrate. The evidence from systematic SEM observations shows that silicon orientation determined by EBSD has a strong effect on diamond nucleation. In general, the diamond nucleation density on Si grains oriented close to <100> is the highest, while it is the lowest for those grains close to <111>, under the same experimental conditions for deposition. The same phenomena have been observed in the range of methane concentration from 2% to 4% in hydrogen.

Original languageEnglish
Pages (from-to)1753-1756
Number of pages4
JournalDiamond and Related Materials
Volume14
Issue number11-12
DOIs
StatePublished - 1 Nov 2005
EventProceedings of the 10th International Conference on New Diamond Science and Technology (ICNDST-10) ICNDST-10 Special Issue -
Duration: 11 May 200514 May 2005

Keywords

  • Bias growth
  • Diamond crystal
  • Nucleation
  • Plasma CVD

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