The Operation of Power MOSFET in Reverse Mode

Min Hwa Chi*, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Power MOSFET's may be used to obtain a low voltage drop in a rectifier circuit. This function will grow more important in future low voltage power supplies. In such a circuit, the MOSFET must operate in the “reverse mode,” in the sense that the current flow is opposite to the conventional direction. This paper discusses the I-V characteristics of power MOS transistors in the reverse mode by extending the theory for device operation in the normal mode. Three regions of operation in the reverse mode are identified. Calculated I–V curves compare favorably with the measured curves of a commercial power MOSFET.

Original languageEnglish
Pages (from-to)1825-1828
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume30
Issue number12
DOIs
StatePublished - 1 Jan 1983

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