The observation of trapping and detrapping effects in high-k gate dielectric mOSFETs by a new gate current random telegraph noise (I G-RTN) approach

C. M. Chang, Steve S. Chung, Y. S. Hsieh, L. W. Cheng, C. T. Tsai, G. H. Ma, S. C. Chien, S. W. Sun

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

37 Scopus citations

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