The observation of trapping and detrapping effects in high-k gate dielectric mOSFETs by a new gate current random telegraph noise (I G-RTN) approach

C. M. Chang, Steve S. Chung, Y. S. Hsieh, L. W. Cheng, C. T. Tsai, G. H. Ma, S. C. Chien, S. W. Sun

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

37 Scopus citations

Abstract

A new method, called gate current Random Telegraph Noise (IG RTN), was developed to analyze the oxide quality and reliability of high-k gate dielectric MOSFETs. First, a single electron trapping/detrapping from process induced trap in nMOSFET was observed and the associated physical mechanism was proposed. Secondly, IG RTN has also been successfully applied to differentiate the difference in electron tunneling mechanism for a device under high-field or low-field stress. Finally, the soft- breakdown (SBD) behavior of a device can be clearly identified. Its IG RTN characteristic is different from that before soft-breakdown. It was found that SBD will indeed induce extra leakage current as a result of an additional breakdown path.

Original languageEnglish
Title of host publication2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs
StatePublished - 1 Dec 2008
Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
Duration: 15 Dec 200817 Dec 2008

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2008 IEEE International Electron Devices Meeting, IEDM 2008
CountryUnited States
CitySan Francisco, CA
Period15/12/0817/12/08

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