The novel V-groove to 3P packaging design and electrical test of AlGaN/GaN power HEMT

Stone Cheng*, Chia Hung Liu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

AlGaN/GaN high electron mobility transistor (HEMT) has many attractive material properties, which make it suitable for power electronic applications. This paper described the development of packaging for high-power AlGaN/GaN high electron mobility transistors (HEMTs) on a silicon substrate. The device is attached in a V-groove copper base, and mounted on TO-3P leadframe. The proposed packaging structure is implemented on the periphery of the surface of the device to enhance thermal management. The various thermal paths from the junction to case reduce the thermal resistance. The effects of the structure design processes and its thermal resistance were investigated. Thermal characterization indicates that the thermal resistance from the GaN chip to the TO-3P package was 13.72°C/W. The investigation of temperature is measured by IR thermography microscope. The validity of module is verified by comparing it with experimental observations. The GaN device with V-groove structure has good predictive result for the electronic characteristics.

Original languageEnglish
Title of host publication2012 IEEE 13th Workshop on Control and Modeling for Power Electronics, COMPEL 2012
DOIs
StatePublished - 1 Oct 2012
Event2012 IEEE 13th Workshop on Control and Modeling for Power Electronics, COMPEL 2012 - Kyoto, Japan
Duration: 10 Jul 201213 Jul 2012

Publication series

Name2012 IEEE 13th Workshop on Control and Modeling for Power Electronics, COMPEL 2012

Conference

Conference2012 IEEE 13th Workshop on Control and Modeling for Power Electronics, COMPEL 2012
CountryJapan
CityKyoto
Period10/07/1213/07/12

Keywords

  • AlGaN/GaN HEMT
  • IR thermography microscope
  • Package
  • thermal resistance
  • v-groove

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