The next generation BSIM for sub-100nm mixed-signal circuit simulation

Xuemei Xi*, Jin He, Mohan Dunga, Chung Hsun Lin, Babak Heydari, Hui Wan, Mansun Chan, Ali M. Niknejad, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

This paper outlines the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate physics that is easily extended to non-chargesheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs.

Original languageEnglish
Pages (from-to)13-16
Number of pages4
JournalProceedings of the Custom Integrated Circuits Conference
DOIs
StatePublished - 1 Dec 2004
EventProceedings of the IEEE 2004 Custom Integrated Circuits Conference, CICC - Orlando, FL, United States
Duration: 3 Oct 20046 Oct 2004

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