The next generation BSIM for sub-100nm mixed-signal circuit simulation

Xuemei Xi*, Jin He, Mohan Dunga, Chung Hsun Lin, Babak Heydari, Hui Wan, Mansun Chan, Ali M. Niknejad, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


This paper outlines the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate physics that is easily extended to non-chargesheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs.

Original languageEnglish
Pages (from-to)13-16
Number of pages4
JournalProceedings of the Custom Integrated Circuits Conference
StatePublished - 1 Dec 2004
EventProceedings of the IEEE 2004 Custom Integrated Circuits Conference, CICC - Orlando, FL, United States
Duration: 3 Oct 20046 Oct 2004

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