This paper outlines the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate physics that is easily extended to non-chargesheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs.
|Number of pages||4|
|Journal||Proceedings of the Custom Integrated Circuits Conference|
|State||Published - 1 Dec 2004|
|Event||Proceedings of the IEEE 2004 Custom Integrated Circuits Conference, CICC - Orlando, FL, United States|
Duration: 3 Oct 2004 → 6 Oct 2004