The new CMOS 2 V low-power IF fully differential Rm-C bandpass amplifier for RF wireless receivers

Chung-Yu Wu*, Yu Cheng, Jeng Gong

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

A new CMOS fully differential bandpass amplifier (BPA) based on the structure of transresistance (Rm) amplifier and capacitor is proposed and analyzed. In this design, the Rm amplifier is realized by a simple inverter with tunable shunt-shunt feedback MOS resistor and tunable negative resistance realized by the cross-coupled MOS transistors in parallel with a current source. The capacitor is in series with the input of Rm amplifier, which realize the filter function and block the dc voltage. Under a 2-V supply voltage, the post-tuning capability of the gain can be as high as 90 dB whereas the tunable frequency range is between 41 MHz and 178 MHz. The power consumption is 11 mw and the dynamic range (DR) is 50 dB. The differential-mode gain is 20 dB and the common-mode gain is -25 dB so that the CMRR is 45 dB. Simple structure, good frequency response, and low power dissipation make the proposed bandpass amplifier quite feasible in the applications of IF stage for RF receivers.

Original languageEnglish
Pages (from-to)633-636
Number of pages4
JournalProceedings - IEEE International Symposium on Circuits and Systems
Volume2
DOIs
StatePublished - 28 May 2000
EventProceedings of the IEEE 2000 International Symposium on Circuits and Systems - Geneva, Switz
Duration: 28 May 200031 May 2000

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