The modified bias-stress effect in organic TFTs

Hsiao-Wen Zan*, Shih Chin Kao, Huang Wei Pan, Kun Chih Lin, Chen Chou Hsu, F. Y. Gan

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, the influence of drain bias on the bias stress effect in pentacene-based organic thin-film transistors was studied. It was found that, under gate bias stress measurement, the threshold voltage shift was strongly affected by the drain bias due to the varied channel charge amount. As a result, conventional stretched-exponential function was modified with a channel charge normalization factor to describe the dependence of threshold voltage shift on the stressing time. The result is important for the design of organic electronic or OTFT active-matrix display, in which the influence of both the gate and the drain biases has to be considered.

Original languageEnglish
Title of host publicationIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
Pages515-518
Number of pages4
StatePublished - 1 Dec 2007
EventInternational Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan
Duration: 3 Jul 20076 Jul 2007

Publication series

NameIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC 2007
CountryTaiwan
CityTaipei
Period3/07/076/07/07

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  • Cite this

    Zan, H-W., Kao, S. C., Pan, H. W., Lin, K. C., Hsu, C. C., & Gan, F. Y. (2007). The modified bias-stress effect in organic TFTs. In IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings (pp. 515-518). (IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings).