The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 μn technology nodes

C. H. Huang*, K. T. Chan, C. Y. Chen, Albert Chin, G. W. Huang, C. Tseng, V. Liang, J. K. Chen, S. C. Chien

*Corresponding author for this work

Research output: Contribution to conferencePaper

21 Scopus citations

Abstract

As scaling down the RF MOSFET from 0.18 to 0.13 μm technology nodes, the fT increases but the NFmin becomes worse by increasing ∼0.2 dB. A small NFmin of 0.93 dB is measured at 5.8 GHz in 0.18 μn MOSFET using 50 fingers but increases as either increasing or decreasing finger number. This abnormal dependence and higher noise at 0. 13μm is accurately analyzed by equivalent circuit model and due to the combined gate resistance and substrate effect.

Original languageEnglish
Pages373-376
Number of pages4
StatePublished - 22 Aug 2003
Event2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Philadelphia, PA, United States
Duration: 8 Jun 200310 Jun 2003

Conference

Conference2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
CountryUnited States
CityPhiladelphia, PA
Period8/06/0310/06/03

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    Huang, C. H., Chan, K. T., Chen, C. Y., Chin, A., Huang, G. W., Tseng, C., Liang, V., Chen, J. K., & Chien, S. C. (2003). The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 μn technology nodes. 373-376. Paper presented at 2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Philadelphia, PA, United States.