As scaling down the RF MOSFET from 0.18 to 0.13 μm technology nodes, the fT increases but the NFmin becomes worse by increasing ∼0.2 dB. A small NFmin of 0.93 dB is measured at 5.8 GHz in 0.18 μn MOSFET using 50 fingers but increases as either increasing or decreasing finger number. This abnormal dependence and higher noise at 0. 13μm is accurately analyzed by equivalent circuit model and due to the combined gate resistance and substrate effect.
|Number of pages||4|
|State||Published - 22 Aug 2003|
|Event||2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Philadelphia, PA, United States|
Duration: 8 Jun 2003 → 10 Jun 2003
|Conference||2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium|
|Period||8/06/03 → 10/06/03|