Ferroelectric (Ba,Sr)(Sn,Ti)O3 (BSTS) thin films were deposited via sol-gel process on LaNiO3-coated silicon substrates. It is evident that the films were perovskite phase and had the (100) preferred orientation from the X-ray diffraction patterns. The addition of strontium to the BaTiO3 lattice increased the grain site of the crystallized films and the addition of Sn to the BaTiO3 lattice decreased the grain size of the crystallized films Dielectric properties were investigated as a function of both temperature and frequency. The difference in the leakage current characteristics of thin film is revealed. The highest tunability value K was found for the Ba0.8Sr0.2Sn0.10Ti 0.90O3 thin films. This demonstrates that the BSTS films may offer superior performance for microwave tunable device application.
- BSTS thin film
- Phase transition