The materials integration of Ge and InxGa1-xAs on Si template for next generation CMOS applications

Edward Yi Chang, Shih Hsuan Tang, Yueh Chin Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In the study, the growth of InAs on Si is demonstrated using "interface blocking" technique with SiGe layers as buffer layer. the growth of high quality Ge film on GaAs substrate by ultra high vacuum chemical vapor deposition and high quality InAs material on Ge/SiGe/Si template grown by molecular beam epitaxy will be particularly reported. By the observation of XRD and AFM, both Ge film grown on GaAs material and InAs grown on Si substrates demonstrate high crystallinity and good surface morphology. The developed epitaxial materials systems including Ge on GaAs and InAs on Si are useful for future III-V/Ge/Si integration for next generation high speed low power CMOS application as well as for RF/digital mixed signal circuit application in the future.

Original languageEnglish
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3
Pages59-67
Number of pages9
Edition3
DOIs
StatePublished - 21 Oct 2013
EventInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting - Toronto, ON, Canada
Duration: 12 May 201317 May 2013

Publication series

NameECS Transactions
Number3
Volume53
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting
CountryCanada
CityToronto, ON
Period12/05/1317/05/13

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    Chang, E. Y., Tang, S. H., & Lin, Y. C. (2013). The materials integration of Ge and InxGa1-xAs on Si template for next generation CMOS applications. In Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 (3 ed., pp. 59-67). (ECS Transactions; Vol. 53, No. 3). https://doi.org/10.1149/05303.0059ecst