In the study, the growth of InAs on Si is demonstrated using "interface blocking" technique with SiGe layers as buffer layer. the growth of high quality Ge film on GaAs substrate by ultra high vacuum chemical vapor deposition and high quality InAs material on Ge/SiGe/Si template grown by molecular beam epitaxy will be particularly reported. By the observation of XRD and AFM, both Ge film grown on GaAs material and InAs grown on Si substrates demonstrate high crystallinity and good surface morphology. The developed epitaxial materials systems including Ge on GaAs and InAs on Si are useful for future III-V/Ge/Si integration for next generation high speed low power CMOS application as well as for RF/digital mixed signal circuit application in the future.
|Title of host publication||Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3|
|Number of pages||9|
|State||Published - 21 Oct 2013|
|Event||International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting - Toronto, ON, Canada|
Duration: 12 May 2013 → 17 May 2013
|Conference||International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting|
|Period||12/05/13 → 17/05/13|