The degradation behavior of hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) under steady-state (DC) and pulsed (AC) stress on drain electrode has been investigated in this paper. Signals with various peak levels, frequencies and duty ratios are applied onto the drain electrode to see their effects on device's reliability. The effects of state creation and removal are found to still be the dominant degradation mechanisms of drain stress. With the experiment data, it is significantly proved that the degradation behavior can be predicted by analyzing the gate-to-source and gate-to-drain vertical electric field during stress. Furthermore, a linear combination model has been contributed in this paper. By using this model, one can estimate the threshold voltage shift under drain AC stress of different voltage levels, frequencies, duty ratios for a given stress time. With satisfactory agreement between the real and estimated data, this model has been proved to be very useful in predicting and evaluating a-Si:H TFT reliability with both gate and drain signal applied.
|Number of pages||8|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||8 PART 1|
|State||Published - 8 Aug 2008|
- A-Si:H thin film transistor (TFT)
- Drain stress
- Reliability model