The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 Distributed Bragg reflectors

Chih Chiang Kao*, Tien-chang Lu, H. W. Huang, J. T. Chu, Y. C. Peng, H. H. Yao, J. Y. Tsai, T. T. Kao, Hao-Chung Kuo, S. C. Wang, C. F. Lin

*Corresponding author for this work

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Abstract

The characteristics of a GaN-based vertical-cavity surface-emitting laser (VCSEL) with 25 pairs AlN-GaN distributed Bragg reflector (DBR) and eight pairs Ta2O5-SiO2 DBR was investigated and analyzed under the optical pumping at room temperature. The GaN-based VCSEL emits a blue wavelength at 448 nm with a linewidth of 0.17 nm with a near-field emission spot diameter of about 3μm. The laser beam has a near linear polarization with a degree of polarization of about 84%. The laser shows a high spontaneous emission coupling efficiency of about 5 × 10-2 and a high characteristic temperature of about 244 K.

Original languageEnglish
Pages (from-to)877-879
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number7
DOIs
StatePublished - 1 Apr 2006

Keywords

  • AlN
  • Distributed Bragg reflector (DBR)
  • GaN
  • Vertical-cavity surface-emitting laser (VCSEL)

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