The investigation of the stress-induced traps and its correlation to PBTI in high-k dielectrics nMOSFETs by the RTN measurement technique

C. H. Chang, E. R. Hsieh, Steve S. Chung, Y. H. Lin, C. H. Tsai, C. T. Tsai, G. H. Ma

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The PBTI is an important issue in the high-k dielectric nMOSFET devices in the present CMOS technology. In this paper, Random telegraph noise (RTN) technique was employed to investigate the stressed-induced traps and their correlation to the hot carrier and PBTI effects. It was found that the positions of stress-induced traps (SITs) are mostly located in the high-k layer, but not close to the high-k/SiO2 interface. The SITs under PBTI stress exhibit a larger amount of ΔNs/Ns in the ΔID/ID fluctuation as a result of the traps which are generated close to the source side and lead to the VT instability. This new finding is helpful toward the understanding of the BTI effect in high-k gate dielectric MOSFETs.

Original languageEnglish
Title of host publicationProceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
Pages70-71
Number of pages2
DOIs
StatePublished - 20 Oct 2010
Event2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 - Hsin Chu, Taiwan
Duration: 26 Apr 201028 Apr 2010

Publication series

NameProceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Conference

Conference2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
CountryTaiwan
CityHsin Chu
Period26/04/1028/04/10

Keywords

  • High-k (HfSiON) dielectrics nMOSFETs
  • Positive bias temperature instability (PBTI)
  • Random telegraph noise (RTN)

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    Chang, C. H., Hsieh, E. R., Chung, S. S., Lin, Y. H., Tsai, C. H., Tsai, C. T., & Ma, G. H. (2010). The investigation of the stress-induced traps and its correlation to PBTI in high-k dielectrics nMOSFETs by the RTN measurement technique. In Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 (pp. 70-71). [5488944] (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010). https://doi.org/10.1109/VTSA.2010.5488944