The investigation of charge loss mechanism in a two-bit wrapped-gate nitride storage nonvolatile memory

Y. H. Ho, Steve S. Chung, H. H. Chen

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The charge loss mechanism of a two-bit wrapped-gate nitride storage nonvolatile memory is investigated. From retention measurements, it was shown that both vertical and lateral charge loss coexist. As a result of the misalignment of carriers, the lateral charge loss was caused by the hole accumulation near the junction and migrating toward the channel. By using a scaling of the word-gate length or a substrate-transient hot hole erase scheme, the charge loss in the lateral direction can be suppressed. Also, from the retention test, the latter scheme, substrate-transient hot hole (STHH), has a window independent of the word-gate length, which is better for the device scaling.

Original languageEnglish
Article number183508
JournalApplied Physics Letters
Volume97
Issue number18
DOIs
StatePublished - 1 Nov 2010

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