Abstract
Proton bombardment technology is integrated into standard IC process as a post-backend process module to form local semi-insulating regions on mixed-signal/RF chips. With 10 15 -cm -2 , 100-μm deep bombardment through mask windows, ρ S =20k-∼50k Ω.cm regions are formed, which are thermally stable at 200C. High-Q inductors and reliable MOSFETs are made on same chip with no need of tuning the existing wafer process. Design rules are established.
Original language | English |
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Pages (from-to) | 673-676 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting |
DOIs | |
State | Published - 1 Dec 2003 |
Event | IEEE International Electron Devices Meeting - Washington, DC, United States Duration: 8 Dec 2003 → 10 Dec 2003 |