The Integration of Proton Bombardment Process into the manufacturing of Mixed-signal/RF Chips

D. D. Tang; W. C. Lin; L. S. Lai; C. H. Wang; L. P. Lee; H. M. Hsu; C. M. Wu; C. W. Chang; W. Y. Lien; C. P. Chao; C. Y. Lee; G. J. Chern; Jyh-Chyurn Guo; C. S. Chang; Y. C. Sun; D. S. Du; K. C. Lan; L. F. Lin

doi:10.1109/IEDM.2003.1269370

The Integration of Proton Bombardment Process into the manufacturing of Mixed-signal/RF Chips

D. D. Tang^*, W. C. Lin, L. S. Lai, C. H. Wang, L. P. Lee, H. M. Hsu, C. M. Wu, C. W. Chang, W. Y. Lien, C. P. Chao, C. Y. Lee, G. J. Chern, Jyh-Chyurn Guo, C. S. Chang, Y. C. Sun, D. S. Du, K. C. Lan, L. F. Lin

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

Proton bombardment technology is integrated into standard IC process as a post-backend process module to form local semi-insulating regions on mixed-signal/RF chips. With 10 ¹⁵ -cm ^-2 , 100-μm deep bombardment through mask windows, ρ _S =20k-∼50k Ω.cm regions are formed, which are thermally stable at 200C. High-Q inductors and reliable MOSFETs are made on same chip with no need of tuning the existing wafer process. Design rules are established.

Original language	English
Pages (from-to)	673-676
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2003.1269370
State	Published - 1 Dec 2003
Event	IEEE International Electron Devices Meeting - Washington, DC, United States Duration: 8 Dec 2003 → 10 Dec 2003

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10.1109/IEDM.2003.1269370

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Tang, D. D., Lin, W. C., Lai, L. S., Wang, C. H., Lee, L. P., Hsu, H. M., Wu, C. M., Chang, C. W., Lien, W. Y., Chao, C. P., Lee, C. Y., Chern, G. J., Guo, J-C., Chang, C. S., Sun, Y. C., Du, D. S., Lan, K. C., & Lin, L. F. (2003). The Integration of Proton Bombardment Process into the manufacturing of Mixed-signal/RF Chips. Technical Digest - International Electron Devices Meeting, 673-676. https://doi.org/10.1109/IEDM.2003.1269370

Tang, D. D. ; Lin, W. C. ; Lai, L. S. ; Wang, C. H. ; Lee, L. P. ; Hsu, H. M. ; Wu, C. M. ; Chang, C. W. ; Lien, W. Y. ; Chao, C. P. ; Lee, C. Y. ; Chern, G. J. ; Guo, Jyh-Chyurn ; Chang, C. S. ; Sun, Y. C. ; Du, D. S. ; Lan, K. C. ; Lin, L. F. / The Integration of Proton Bombardment Process into the manufacturing of Mixed-signal/RF Chips. In: Technical Digest - International Electron Devices Meeting. 2003 ; pp. 673-676.

@article{ffa9a166c9d7429b8d7004b8b14ba4a9,

title = "The Integration of Proton Bombardment Process into the manufacturing of Mixed-signal/RF Chips",

abstract = " Proton bombardment technology is integrated into standard IC process as a post-backend process module to form local semi-insulating regions on mixed-signal/RF chips. With 10 15 -cm -2 , 100-μm deep bombardment through mask windows, ρ S =20k-∼50k Ω.cm regions are formed, which are thermally stable at 200C. High-Q inductors and reliable MOSFETs are made on same chip with no need of tuning the existing wafer process. Design rules are established. ",

author = "Tang, {D. D.} and Lin, {W. C.} and Lai, {L. S.} and Wang, {C. H.} and Lee, {L. P.} and Hsu, {H. M.} and Wu, {C. M.} and Chang, {C. W.} and Lien, {W. Y.} and Chao, {C. P.} and Lee, {C. Y.} and Chern, {G. J.} and Jyh-Chyurn Guo and Chang, {C. S.} and Sun, {Y. C.} and Du, {D. S.} and Lan, {K. C.} and Lin, {L. F.}",

year = "2003",

month = dec,

day = "1",

doi = "10.1109/IEDM.2003.1269370",

language = "English",

pages = "673--676",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 08-12-2003 Through 10-12-2003",

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Tang, DD, Lin, WC, Lai, LS, Wang, CH, Lee, LP, Hsu, HM, Wu, CM, Chang, CW, Lien, WY, Chao, CP, Lee, CY, Chern, GJ, Guo, J-C, Chang, CS, Sun, YC, Du, DS, Lan, KC & Lin, LF 2003, 'The Integration of Proton Bombardment Process into the manufacturing of Mixed-signal/RF Chips', Technical Digest - International Electron Devices Meeting, pp. 673-676. https://doi.org/10.1109/IEDM.2003.1269370

The Integration of Proton Bombardment Process into the manufacturing of Mixed-signal/RF Chips. / Tang, D. D.; Lin, W. C.; Lai, L. S.; Wang, C. H.; Lee, L. P.; Hsu, H. M.; Wu, C. M.; Chang, C. W.; Lien, W. Y.; Chao, C. P.; Lee, C. Y.; Chern, G. J.; Guo, Jyh-Chyurn; Chang, C. S.; Sun, Y. C.; Du, D. S.; Lan, K. C.; Lin, L. F.

In: Technical Digest - International Electron Devices Meeting, 01.12.2003, p. 673-676.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - The Integration of Proton Bombardment Process into the manufacturing of Mixed-signal/RF Chips

AU - Tang, D. D.

AU - Lin, W. C.

AU - Lai, L. S.

AU - Wang, C. H.

AU - Lee, L. P.

AU - Hsu, H. M.

AU - Wu, C. M.

AU - Chang, C. W.

AU - Lien, W. Y.

AU - Chao, C. P.

AU - Lee, C. Y.

AU - Chern, G. J.

AU - Guo, Jyh-Chyurn

AU - Chang, C. S.

AU - Sun, Y. C.

AU - Du, D. S.

AU - Lan, K. C.

AU - Lin, L. F.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - Proton bombardment technology is integrated into standard IC process as a post-backend process module to form local semi-insulating regions on mixed-signal/RF chips. With 10 15 -cm -2 , 100-μm deep bombardment through mask windows, ρ S =20k-∼50k Ω.cm regions are formed, which are thermally stable at 200C. High-Q inductors and reliable MOSFETs are made on same chip with no need of tuning the existing wafer process. Design rules are established.

AB - Proton bombardment technology is integrated into standard IC process as a post-backend process module to form local semi-insulating regions on mixed-signal/RF chips. With 10 15 -cm -2 , 100-μm deep bombardment through mask windows, ρ S =20k-∼50k Ω.cm regions are formed, which are thermally stable at 200C. High-Q inductors and reliable MOSFETs are made on same chip with no need of tuning the existing wafer process. Design rules are established.

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