The integration of Ge and III-V materials on GaAs and Si for Post CMOS applications

Edward Yi Chang, Chia Hua Chang, Shih Hsuan Tang, Hai Dang Trinh, Chien I. Kuo, Ching Yi Hsu, Yung Hsuan Su

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In the study, the growth of InAs on Si is demonstrated using "interface blocking" technique with SiGe layers as buffer layer. And the growth of high quality Ge film on GaAs is demonstrated using ultra high vacuum chemical vapor deposition (UHVCVD). Both Ge film grown on GaAs and InAs film grown on Si substrate demonstrate high crystallinity and good surface morphology as observed by XRD and AFM. Furthermore, the fabrication process and electric characteristics of Ge/GaAs and InAs/Si is discussed in the study. The developed epitaxial materials systems and device fabrication including InAs on Si, Ge on GaAs are useful for future III-V and Ge integration on Si substrate for next generation high speed low power CMOS as well as for RF/digital mixed signal circuit applications in the future.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2012, CSTIC 2012
Pages715-720
Number of pages6
Edition1
DOIs
StatePublished - 1 Dec 2012
EventChina Semiconductor Technology International Conference 2012, CSTIC 2012 - Shanghai, China
Duration: 18 Mar 201219 Mar 2012

Publication series

NameECS Transactions
Number1
Volume44
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceChina Semiconductor Technology International Conference 2012, CSTIC 2012
CountryChina
CityShanghai
Period18/03/1219/03/12

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