The instability of a-Si:H TFT under mechanical strain with high frequency ac bias stress

M. C. Wang*, T. C. Chang, Po-Tsun Liu, S. W. Tsao, Y. P. Lin, J. R. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

The instability of amorphous Si thin film transistors under uniaxial strain has been studied. Compared to the effect of tensile bias stress, larger threshold voltage (Vtha) shift is observed under compressive bias stress. These results are related to the damage of weak Si-Si bonds during the ac bias stress. However, the Vth shift of devices on the re-flattened substrate is larger after tensile strain than that of compressive strain. In addition, the defeat diminished effect of tensile situation is decreased after re-flattening the device. Therefore, after re-flattening the substrate the Vth shift resulting from tensile bias stress is larger than that of the compressive one.

Original languageEnglish
Pages (from-to) J113-J116
Number of pages4
JournalElectrochemical and Solid-State Letters
Volume10
Issue number10
DOIs
StatePublished - 19 Jul 2007

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