The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect states

Huang-Chung Cheng; Jun Wei Tsai; Chun Yao Huang; Fang Chen Luo; Hsing Chien Tuan

doi:10.1143/JJAP.36.6226

The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect states

Huang-Chung Cheng^*, Jun Wei Tsai, Chun Yao Huang, Fang Chen Luo, Hsing Chien Tuan

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The instability characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) with various interfacial and bulk defect states were systematically investigated. It was found that, under positive bias stresses, the threshold voltage shifts of a-Si:H TFT's with the same interfacial defect states but with different bulk defect states exhibited similar threshold voltage shift characteristics. In contrast, a-Si:H TFT's with different interfacial defect states but the same bulk defect states showed threshold voltage shifts proportional to the interfacial defect states under positive bias stresses. Furthermore, both the above kinds of a-Si:H TFT under positive bias stresses exhibited that the subthreshold swing shift characteristics closely related to both the interfacial and bulk defect states.

Original language	English
Pages (from-to)	6226-6229
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	36
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.36.6226
State	Published - 1 Dec 1997

Keywords

Amorphous silicon
Bias stress
Subthreshold swing shift
Thin film transistor
Threshold voltage shift

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@article{8ee588c85fc544088cae16d050137298,

title = "The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect states",

abstract = "The instability characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) with various interfacial and bulk defect states were systematically investigated. It was found that, under positive bias stresses, the threshold voltage shifts of a-Si:H TFT's with the same interfacial defect states but with different bulk defect states exhibited similar threshold voltage shift characteristics. In contrast, a-Si:H TFT's with different interfacial defect states but the same bulk defect states showed threshold voltage shifts proportional to the interfacial defect states under positive bias stresses. Furthermore, both the above kinds of a-Si:H TFT under positive bias stresses exhibited that the subthreshold swing shift characteristics closely related to both the interfacial and bulk defect states.",

keywords = "Amorphous silicon, Bias stress, Subthreshold swing shift, Thin film transistor, Threshold voltage shift",

author = "Huang-Chung Cheng and Tsai, {Jun Wei} and Huang, {Chun Yao} and Luo, {Fang Chen} and Tuan, {Hsing Chien}",

year = "1997",

month = dec,

day = "1",

doi = "10.1143/JJAP.36.6226",

language = "English",

volume = "36",

pages = "6226--6229",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "10",

}

The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect states. / Cheng, Huang-Chung; Tsai, Jun Wei; Huang, Chun Yao; Luo, Fang Chen; Tuan, Hsing Chien.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 36, No. 10, 01.12.1997, p. 6226-6229.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect states

AU - Cheng, Huang-Chung

AU - Tsai, Jun Wei

AU - Huang, Chun Yao

AU - Luo, Fang Chen

AU - Tuan, Hsing Chien

PY - 1997/12/1

Y1 - 1997/12/1

N2 - The instability characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) with various interfacial and bulk defect states were systematically investigated. It was found that, under positive bias stresses, the threshold voltage shifts of a-Si:H TFT's with the same interfacial defect states but with different bulk defect states exhibited similar threshold voltage shift characteristics. In contrast, a-Si:H TFT's with different interfacial defect states but the same bulk defect states showed threshold voltage shifts proportional to the interfacial defect states under positive bias stresses. Furthermore, both the above kinds of a-Si:H TFT under positive bias stresses exhibited that the subthreshold swing shift characteristics closely related to both the interfacial and bulk defect states.

AB - The instability characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) with various interfacial and bulk defect states were systematically investigated. It was found that, under positive bias stresses, the threshold voltage shifts of a-Si:H TFT's with the same interfacial defect states but with different bulk defect states exhibited similar threshold voltage shift characteristics. In contrast, a-Si:H TFT's with different interfacial defect states but the same bulk defect states showed threshold voltage shifts proportional to the interfacial defect states under positive bias stresses. Furthermore, both the above kinds of a-Si:H TFT under positive bias stresses exhibited that the subthreshold swing shift characteristics closely related to both the interfacial and bulk defect states.

KW - Amorphous silicon

KW - Bias stress

KW - Subthreshold swing shift

KW - Thin film transistor

KW - Threshold voltage shift

UR - http://www.scopus.com/inward/record.url?scp=0031245543&partnerID=8YFLogxK

U2 - 10.1143/JJAP.36.6226

DO - 10.1143/JJAP.36.6226

M3 - Article

AN - SCOPUS:0031245543

VL - 36

SP - 6226

EP - 6229

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 10

ER -