The influences of oxygen incorporation on the defect trap states of a-IGZO thin-film transistors

Chun Chieh Lo, Tsung-Eong Hsien*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Thin-film transistors (TFTs) comprised of amorphous indium-gallium-zinc- oxide (a-IGZO) as the active channel layers were prepared by sputtering process at various Ar/O 2 gas flow ratios and their electrical properties were investigated. Device characterizations indicated that the TFT sample prepared at the condition of Ar/O 2 ratio = 20:0.6 exhibits the best performance with field-effect mobility (μ FE) = 5.2 cm 2·V -1·sec -1, threshold voltage (V th) = 0.7 V, subthreshold gate swing (S.S.) = 0.9 V·decade -1 and on/off ratio = 5×10 6. Such a sample also exhibited the lowest interface trap density (D it = 2.8×10 10 eV -1·cm -2) and the highest capacitance density (334 nF·cm -2) as revealed by capacitance-voltage (C-V) analysis and the lowest leakage current density of 25 nA/cm 2 at 10 MV/cm (in case of positive bias on top electrode) as revealed by current-voltage (I-V) measurement.

Original languageEnglish
Title of host publicationWide-Bandgap Semiconductor Materials and Devices 13
Pages239-243
Number of pages5
Edition7
DOIs
StatePublished - 19 Nov 2012
Event13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting - Seattle, WA, United States
Duration: 6 May 201210 May 2012

Publication series

NameECS Transactions
Number7
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period6/05/1210/05/12

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    Lo, C. C., & Hsien, T-E. (2012). The influences of oxygen incorporation on the defect trap states of a-IGZO thin-film transistors. In Wide-Bandgap Semiconductor Materials and Devices 13 (7 ed., pp. 239-243). (ECS Transactions; Vol. 45, No. 7). https://doi.org/10.1149/1.3701544