The influences of contact interfaces between the indium tin oxide-based contact layer and GaN-based LEDs

Chin Yuan Hsu*, Wen How Lan, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We have fabricated GaN-based light-emitting diodes (LEDs) using transparent indium tin oxide-based (ITO-based) p contacts. The current-voltage characteristics and life tests of GaN-based LEDs have been studied. LED life tests showed that a pure ITO contact layer had poor reliability at high current stress. We also found that the GaN-based LED could achieve good reliability with a NiO/ITO contact layer. Using transmission electron microscopy and energy-dispersive X-ray spectrometer analyses, we observed In-contained metallic interface between the p-GaN layer and the pure ITO contact layer after annealing at 600°C. It revealed that ITO would react at interface or indiffuse near the interface at 600°C. The LED was degraded with unstable interfaces after life tests (stressed by a 50-mA current injection). To improve the reliability of GaN-based LEDs with the ITO contact layer, we suggest that the NiO layer be used to prevent the reaction and block the leakage pathway.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume153
Issue number5
DOIs
StatePublished - 17 Apr 2006

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