The influence of NH3 plasma treatment on Al2O 3/HfO2 gate dielectrics of TFTs with atmospheric pressure plasma jet deposited IGZO channel

Hau Yuan Huang, Chien Hung Wu*, Shui Jinn Wang, Kow-Ming Chang, Hsin Yu Hsu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Indium-gallium-zinc-oxide (IGZO) thin-film transistors are fabricated by atmospheric pressure plasma jet (APPJ) technique. HfO2 (25 nm) and Al2O3 (25 nm) are used as the gate dielectric stack. NH3 plasma treatment is applied to optimize the device performance by reducing the gate dielectric leakage and increasing the oxide capacitance. The best performance of the APPJ IGZO TFT is obtained with a 30W-60s NH3 plasma treatment with field-effect mobility of 6.1 cm2/V-s, subthreshold swing of 0.19 V/dec, and on/off current ratio of 108.

Original languageEnglish
Title of host publication72nd Device Research Conference, DRC 2014 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages161-162
Number of pages2
ISBN (Print)9781479954056
DOIs
StatePublished - 1 Jan 2014
Event72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States
Duration: 22 Jun 201425 Jun 2014

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Conference

Conference72nd Device Research Conference, DRC 2014
CountryUnited States
CitySanta Barbara, CA
Period22/06/1425/06/14

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