The influence of InAs layer on the negative differential resistance behaviors of the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure

M. P. Houng, Y. H. Wang, C. L. Shen, Jenn-Fang Chen, A. Y. Cho

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The authors have demonstrated a novel resonant interband tunneling device with GaSb/AlSb/InAs/GaSb/AlSb/InAs structures. It is found that InAs well thicknesses have a significant influence on the I-V characteristics of this device. The incorporation of an InAs layer in the well region will promote a peak-to-valley ratio of 20 at 300 K, nearly five times larger than that of the primitive one. Furthermore, multiple negative differential resistance behavior was obtained with InAs well thicknesses were in the range of 120 A to 300 A. Otherwise, single negative resistance is obtained. The significant influence of the added InAs layer on the electrical performance of the corresponding structure is found to be due to the electron-light hole coupling effect.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages817-820
Number of pages4
ISBN (Electronic)0780302435
DOIs
StatePublished - 1 Jan 1991
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: 8 Dec 199111 Dec 1991

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1991-January
ISSN (Print)0163-1918

Conference

ConferenceInternational Electron Devices Meeting, IEDM 1991
CountryUnited States
CityWashington
Period8/12/9111/12/91

Keywords

  • Boundary conditions
  • Charge carrier processes
  • Current density
  • Effective mass
  • Electric resistance
  • Electrons
  • Optical coupling
  • Resonance
  • Resonant tunneling devices

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