The Influence of Annealing Temperature on Amorphous Indium-Zinc-Tungsten Oxide Thin-Film Transistors

Ruofan Fu, Jianwen Yang, Wei Chiao Chang, Wei Cheng Chang, Chien Min Chang, Dong Lin, Qun Zhang*, Po-Tsun Liu, Han Ping D. Shieh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In this paper, the influence of annealing temperature on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) is investigated. As the annealing temperature increases, the IZWO films maintain an amorphous state, which is conducive to the uniformity of the TFT. The field effect mobility of the device increases as a function of annealing temperature and reaches 16.2 cm 2 V −1 s −1 at 300 °C, along with an on/off current ratio of 1.6 × 10 8 . Meanwhile, the corresponding positive bias stability is improved, as confirmed by the fact that the threshold voltage shift value reduces to 0.4 V after being stressed for 1500 s. This result can be ascribed to the decrease in electrons captured by the deep defects in a-IZWO TFTs.

Original languageEnglish
Article number1700785
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume215
Issue number6
DOIs
StatePublished - 21 Mar 2018

Keywords

  • annealing
  • indium-zinc-tungsten-oxide
  • positive bias stress
  • thin-film transistors

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