The Influence of AlN Nucleation Layer on Radio Frequency Transmission Loss of AlN-on-Si Heterostructure

Shane Chang*, Ming Zhao, Valentina Spampinato, Alexis Franquet, Thi Hien Do, Akira Uedono, Tien Tung Luong, Tsang Hsuan Wang, Li Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Reducing radio frequency (RF) transmission loss is a key requirement when fabricating GaN-on-Si RF devices. To get a better insight into the RF loss mechanism in the GaN-on-Si structure, the RF loss of an AlN/Si template is investigated by varying the growth temperature of AlN during a metalorganic chemical vapor deposition process. The results show that the RF loss of the AlN/Si template is dominated by the interface loss due to the p-type conductive channel at the AlN/Si interface, which is induced by the thermal diffusion of Al during the high-temperature growth. Although a low growth temperature of the AlN nucleation layer can suppress the RF loss in the AlN/Si template, it results in a low crystalline quality of AlN for practical use. Optimizing the growth temperature of the AlN nucleation layer is essential to obtain a good balance between the crystalline quality, morphological quality, and RF loss such that the AlN/Si template is suitable for epitaxial growth of the complete GaN-on-Si RF device structure.

Original languageEnglish
Article number1900755
JournalPhysica Status Solidi (A) Applications and Materials Science
DOIs
StateE-pub ahead of print - 4 Feb 2020

Keywords

  • AlN nucleation layers
  • coplanar waveguides
  • GaN on Si
  • high frequency
  • metalorganic chemical vapor deposition
  • radio frequency loss

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