The improvement effect of the plasma nitridation process to the reliability of HfO2 thin films

Kow-Ming Chang*, Bwo Ning Chen, Chun Kai Tang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

There have been some researches which describe that the thermal stability and the dielectric constant of the high-k dielectrics could be improved by the nitridation process. In this study, we examined the effect of different ICP plasma nitridation process to the reliability of HfO2 thin films. The capacitance-voltage and current-voltage characteristics of nitrided samples were observed to decide the most suitable process time. The hysteresis, stress induced leakage current (SILC) and constant voltage stress (CVS) characteristics of the nitrided samples were preformed to verify the improvement effect of the plasma nitridation. According to this study, the ICP plasma nitridation process would be an effective technology to improve the reliability of pure HfO 2 thin films.

Original languageEnglish
Title of host publicationSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10
Pages773-784
Number of pages12
Edition2
DOIs
StatePublished - 1 Dec 2009
EventInternational Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society - San Francisco, CA, United States
Duration: 24 May 200929 May 2009

Publication series

NameECS Transactions
Number2
Volume19
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceInternational Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society
CountryUnited States
CitySan Francisco, CA
Period24/05/0929/05/09

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