The impact of uniaxial strain on low frequency noise of nanoscale PMOSFETs with e-SiGe and i-SiGe source/drain

Kuo Liang Yeh; Wei Lun Hong; Jyh-Chyurn Guo

doi:10.1109/MWSYM.2010.5517095

The impact of uniaxial strain on low frequency noise of nanoscale PMOSFETs with e-SiGe and i-SiGe source/drain

Kuo Liang Yeh^*, Wei Lun Hong, Jyh-Chyurn Guo

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The impact of uni-axial strain from embedded SiGe in recessed SID (e-SiGe) and Ge implanted SID (i-SiGe) on effective mobility μ_eff gate leakage current, short channel effect (SeE) and low frequency noise (LFN) in pMOS has been investigated. The e-SiGe can realize superior μ_eff enhancement but lead to worse SeE and LFN. The i-SiGe can reduce SeE and LFN but suffers limited !lefT improvement. Mobility fluctuation model can explain the trade-off and forward body biases (FBB) method can overcome the trade-off. SiGe strain combined with FBB is an effective solution in nanoscale pMOS to enhance RF and analog performance.

Original language	English
Title of host publication	2010 IEEE MTT-S International Microwave Symposium, MTT 2010
Pages	316-319
Number of pages	4
DOIs	https://doi.org/10.1109/MWSYM.2010.5517095
State	Published - 15 Oct 2010
Event	2010 IEEE MTT-S International Microwave Symposium, MTT 2010 - Anaheim, CA, United States Duration: 23 May 2010 → 28 May 2010

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
ISSN (Print)	0149-645X

Conference

Conference	2010 IEEE MTT-S International Microwave Symposium, MTT 2010
Country	United States
City	Anaheim, CA
Period	23/05/10 → 28/05/10

Keywords

Body bias
Low frequency noise
Mobility fluctuation
pMOSFET
SiGe
Strain
Uni-axial

Access to Document

10.1109/MWSYM.2010.5517095

Fingerprint Dive into the research topics of 'The impact of uniaxial strain on low frequency noise of nanoscale PMOSFETs with e-SiGe and i-SiGe source/drain'. Together they form a unique fingerprint.

Cite this

@inproceedings{b25e51595fb4484e85a9763c0bd747d7,

title = "The impact of uniaxial strain on low frequency noise of nanoscale PMOSFETs with e-SiGe and i-SiGe source/drain",

abstract = "The impact of uni-axial strain from embedded SiGe in recessed SID (e-SiGe) and Ge implanted SID (i-SiGe) on effective mobility μeff gate leakage current, short channel effect (SeE) and low frequency noise (LFN) in pMOS has been investigated. The e-SiGe can realize superior μeff enhancement but lead to worse SeE and LFN. The i-SiGe can reduce SeE and LFN but suffers limited !lefT improvement. Mobility fluctuation model can explain the trade-off and forward body biases (FBB) method can overcome the trade-off. SiGe strain combined with FBB is an effective solution in nanoscale pMOS to enhance RF and analog performance.",

keywords = "Body bias, Low frequency noise, Mobility fluctuation, pMOSFET, SiGe, Strain, Uni-axial",

author = "Yeh, {Kuo Liang} and Hong, {Wei Lun} and Jyh-Chyurn Guo",

year = "2010",

month = oct,

day = "15",

doi = "10.1109/MWSYM.2010.5517095",

language = "English",

isbn = "9781424477326",

series = "IEEE MTT-S International Microwave Symposium Digest",

pages = "316--319",

booktitle = "2010 IEEE MTT-S International Microwave Symposium, MTT 2010",

note = "null ; Conference date: 23-05-2010 Through 28-05-2010",

}

Yeh, KL, Hong, WL & Guo, J-C 2010, The impact of uniaxial strain on low frequency noise of nanoscale PMOSFETs with e-SiGe and i-SiGe source/drain. in 2010 IEEE MTT-S International Microwave Symposium, MTT 2010., 5517095, IEEE MTT-S International Microwave Symposium Digest, pp. 316-319, 2010 IEEE MTT-S International Microwave Symposium, MTT 2010, Anaheim, CA, United States, 23/05/10. https://doi.org/10.1109/MWSYM.2010.5517095

The impact of uniaxial strain on low frequency noise of nanoscale PMOSFETs with e-SiGe and i-SiGe source/drain. / Yeh, Kuo Liang; Hong, Wei Lun; Guo, Jyh-Chyurn.

2010 IEEE MTT-S International Microwave Symposium, MTT 2010. 2010. p. 316-319 5517095 (IEEE MTT-S International Microwave Symposium Digest).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - The impact of uniaxial strain on low frequency noise of nanoscale PMOSFETs with e-SiGe and i-SiGe source/drain

AU - Yeh, Kuo Liang

AU - Hong, Wei Lun

AU - Guo, Jyh-Chyurn

PY - 2010/10/15

Y1 - 2010/10/15

N2 - The impact of uni-axial strain from embedded SiGe in recessed SID (e-SiGe) and Ge implanted SID (i-SiGe) on effective mobility μeff gate leakage current, short channel effect (SeE) and low frequency noise (LFN) in pMOS has been investigated. The e-SiGe can realize superior μeff enhancement but lead to worse SeE and LFN. The i-SiGe can reduce SeE and LFN but suffers limited !lefT improvement. Mobility fluctuation model can explain the trade-off and forward body biases (FBB) method can overcome the trade-off. SiGe strain combined with FBB is an effective solution in nanoscale pMOS to enhance RF and analog performance.

AB - The impact of uni-axial strain from embedded SiGe in recessed SID (e-SiGe) and Ge implanted SID (i-SiGe) on effective mobility μeff gate leakage current, short channel effect (SeE) and low frequency noise (LFN) in pMOS has been investigated. The e-SiGe can realize superior μeff enhancement but lead to worse SeE and LFN. The i-SiGe can reduce SeE and LFN but suffers limited !lefT improvement. Mobility fluctuation model can explain the trade-off and forward body biases (FBB) method can overcome the trade-off. SiGe strain combined with FBB is an effective solution in nanoscale pMOS to enhance RF and analog performance.

KW - Body bias

KW - Low frequency noise

KW - Mobility fluctuation

KW - pMOSFET

KW - SiGe

KW - Strain

KW - Uni-axial

UR - http://www.scopus.com/inward/record.url?scp=77957808042&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2010.5517095

DO - 10.1109/MWSYM.2010.5517095

M3 - Conference contribution

AN - SCOPUS:77957808042

SN - 9781424477326

T3 - IEEE MTT-S International Microwave Symposium Digest

SP - 316

EP - 319

BT - 2010 IEEE MTT-S International Microwave Symposium, MTT 2010

Y2 - 23 May 2010 through 28 May 2010

ER -