@inproceedings{b25e51595fb4484e85a9763c0bd747d7,
title = "The impact of uniaxial strain on low frequency noise of nanoscale PMOSFETs with e-SiGe and i-SiGe source/drain",
abstract = "The impact of uni-axial strain from embedded SiGe in recessed SID (e-SiGe) and Ge implanted SID (i-SiGe) on effective mobility μeff gate leakage current, short channel effect (SeE) and low frequency noise (LFN) in pMOS has been investigated. The e-SiGe can realize superior μeff enhancement but lead to worse SeE and LFN. The i-SiGe can reduce SeE and LFN but suffers limited !lefT improvement. Mobility fluctuation model can explain the trade-off and forward body biases (FBB) method can overcome the trade-off. SiGe strain combined with FBB is an effective solution in nanoscale pMOS to enhance RF and analog performance.",
keywords = "Body bias, Low frequency noise, Mobility fluctuation, pMOSFET, SiGe, Strain, Uni-axial",
author = "Yeh, {Kuo Liang} and Hong, {Wei Lun} and Jyh-Chyurn Guo",
year = "2010",
month = oct,
day = "15",
doi = "10.1109/MWSYM.2010.5517095",
language = "English",
isbn = "9781424477326",
series = "IEEE MTT-S International Microwave Symposium Digest",
pages = "316--319",
booktitle = "2010 IEEE MTT-S International Microwave Symposium, MTT 2010",
note = "null ; Conference date: 23-05-2010 Through 28-05-2010",
}