The impact of uniaxial strain on low frequency noise of nanoscale PMOSFETs with e-SiGe and i-SiGe source/drain

Kuo Liang Yeh; Wei Lun Hong; Jyh-Chyurn Guo

doi:10.1109/MWSYM.2010.5517095

The impact of uniaxial strain on low frequency noise of nanoscale PMOSFETs with e-SiGe and i-SiGe source/drain

Kuo Liang Yeh^*, Wei Lun Hong, Jyh-Chyurn Guo

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The impact of uni-axial strain from embedded SiGe in recessed SID (e-SiGe) and Ge implanted SID (i-SiGe) on effective mobility μ_eff gate leakage current, short channel effect (SeE) and low frequency noise (LFN) in pMOS has been investigated. The e-SiGe can realize superior μ_eff enhancement but lead to worse SeE and LFN. The i-SiGe can reduce SeE and LFN but suffers limited !lefT improvement. Mobility fluctuation model can explain the trade-off and forward body biases (FBB) method can overcome the trade-off. SiGe strain combined with FBB is an effective solution in nanoscale pMOS to enhance RF and analog performance.

Original language	English
Title of host publication	2010 IEEE MTT-S International Microwave Symposium, MTT 2010
Pages	316-319
Number of pages	4
DOIs	https://doi.org/10.1109/MWSYM.2010.5517095
State	Published - 15 Oct 2010
Event	2010 IEEE MTT-S International Microwave Symposium, MTT 2010 - Anaheim, CA, United States Duration: 23 May 2010 → 28 May 2010

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
ISSN (Print)	0149-645X

Conference

Conference	2010 IEEE MTT-S International Microwave Symposium, MTT 2010
Country	United States
City	Anaheim, CA
Period	23/05/10 → 28/05/10

Keywords

Body bias
Low frequency noise
Mobility fluctuation
pMOSFET
SiGe
Strain
Uni-axial

Access to Document

10.1109/MWSYM.2010.5517095

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title = "The impact of uniaxial strain on low frequency noise of nanoscale PMOSFETs with e-SiGe and i-SiGe source/drain",

abstract = "The impact of uni-axial strain from embedded SiGe in recessed SID (e-SiGe) and Ge implanted SID (i-SiGe) on effective mobility μeff gate leakage current, short channel effect (SeE) and low frequency noise (LFN) in pMOS has been investigated. The e-SiGe can realize superior μeff enhancement but lead to worse SeE and LFN. The i-SiGe can reduce SeE and LFN but suffers limited !lefT improvement. Mobility fluctuation model can explain the trade-off and forward body biases (FBB) method can overcome the trade-off. SiGe strain combined with FBB is an effective solution in nanoscale pMOS to enhance RF and analog performance.",

keywords = "Body bias, Low frequency noise, Mobility fluctuation, pMOSFET, SiGe, Strain, Uni-axial",

author = "Yeh, {Kuo Liang} and Hong, {Wei Lun} and Jyh-Chyurn Guo",

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series = "IEEE MTT-S International Microwave Symposium Digest",

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Yeh, KL, Hong, WL & Guo, J-C 2010, The impact of uniaxial strain on low frequency noise of nanoscale PMOSFETs with e-SiGe and i-SiGe source/drain. in 2010 IEEE MTT-S International Microwave Symposium, MTT 2010., 5517095, IEEE MTT-S International Microwave Symposium Digest, pp. 316-319, 2010 IEEE MTT-S International Microwave Symposium, MTT 2010, Anaheim, CA, United States, 23/05/10. https://doi.org/10.1109/MWSYM.2010.5517095

The impact of uniaxial strain on low frequency noise of nanoscale PMOSFETs with e-SiGe and i-SiGe source/drain. / Yeh, Kuo Liang; Hong, Wei Lun; Guo, Jyh-Chyurn.

2010 IEEE MTT-S International Microwave Symposium, MTT 2010. 2010. p. 316-319 5517095 (IEEE MTT-S International Microwave Symposium Digest).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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