The impact of uniaxial strain on low frequency noise of nanoscale PMOSFETs with e-SiGe and i-SiGe source/drain

Kuo Liang Yeh*, Wei Lun Hong, Jyh-Chyurn Guo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The impact of uni-axial strain from embedded SiGe in recessed SID (e-SiGe) and Ge implanted SID (i-SiGe) on effective mobility μeff gate leakage current, short channel effect (SeE) and low frequency noise (LFN) in pMOS has been investigated. The e-SiGe can realize superior μeff enhancement but lead to worse SeE and LFN. The i-SiGe can reduce SeE and LFN but suffers limited !lefT improvement. Mobility fluctuation model can explain the trade-off and forward body biases (FBB) method can overcome the trade-off. SiGe strain combined with FBB is an effective solution in nanoscale pMOS to enhance RF and analog performance.

Original languageEnglish
Title of host publication2010 IEEE MTT-S International Microwave Symposium, MTT 2010
Pages316-319
Number of pages4
DOIs
StatePublished - 15 Oct 2010
Event2010 IEEE MTT-S International Microwave Symposium, MTT 2010 - Anaheim, CA, United States
Duration: 23 May 201028 May 2010

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2010 IEEE MTT-S International Microwave Symposium, MTT 2010
CountryUnited States
CityAnaheim, CA
Period23/05/1028/05/10

Keywords

  • Body bias
  • Low frequency noise
  • Mobility fluctuation
  • pMOSFET
  • SiGe
  • Strain
  • Uni-axial

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