The impact of uniaxial strain on flicker noise and random telegraph noise of SiC strained nMOSFETs in 40nm CMOS technology

Kuo Liang Yeh*, Chih Shiang Chang, Jyh-Chyurn Guo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The impact of uniaxial strain on flicker noise and random telegraph noise (RTN) was investigated in frequency and time domains, respectively. Both control and SiC strained nMOS reveal flicker noise dominated by number fluctuation model but the latter one with uniaxial strain suffers significantly higher noise. RTN measured from SiC strained nMOS features a complex spectrum with multi-level drain current fluctuation amplitudes. The capture time (τ c ), emission time (τ e ), and effective trap depth (Z eff ) can be extracted to explore the impact from the uniaxial strain on trap properties, RTN, and flicker noise.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2011
Subtitle of host publication"Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011
Pages73-76
Number of pages4
StatePublished - 1 Dec 2011
Event14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011 - Manchester, United Kingdom
Duration: 10 Oct 201111 Oct 2011

Publication series

NameEuropean Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011

Conference

Conference14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011
CountryUnited Kingdom
CityManchester
Period10/10/1111/10/11

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