The impact of uniaxial strain engineering on channel backscattering in nanoscale MOSFETs

Hong Nien Lin*, Hung Wei Chen, Chih Hsin Ko, Chung Hu Ge, Horng-Chih Lin, Tiao Yuan Huang, Wen Chin Lee, Denny D. Tang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Scopus citations

Abstract

The influence of uniaxial process-induced strain on carrier channel backscattering in nanoscale MOSFETs is reported for the first time. It is observed that the backscattering ratio can be reduced by uniaxial tensile strain while it is increased by uniaxial compressive strain mainly due to strain-induced modulation in mean-free-path for backscattering and slight decrease in kBT layer thickness. Nevertheless, both strain polarities improve source-side injection velocity because of reduced carrier effective mass. Impact to current drive under uniaxial strain is analyzed in terms of mean-free-path, kBT layer thickness, ballistic efficiency and injection velocity.

Original languageEnglish
Title of host publication2005 Symposium on VLSI Technology, Digest of Technical Papers
Pages174-175
Number of pages2
DOIs
StatePublished - 1 Dec 2005
Event2005 Symposium on VLSI Technology - Kyoto, Japan
Duration: 14 Jun 200514 Jun 2005

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2005
ISSN (Print)0743-1562

Conference

Conference2005 Symposium on VLSI Technology
CountryJapan
CityKyoto
Period14/06/0514/06/05

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    Lin, H. N., Chen, H. W., Ko, C. H., Ge, C. H., Lin, H-C., Huang, T. Y., Lee, W. C., & Tang, D. D. (2005). The impact of uniaxial strain engineering on channel backscattering in nanoscale MOSFETs. In 2005 Symposium on VLSI Technology, Digest of Technical Papers (pp. 174-175). [1469256] (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2005). https://doi.org/10.1109/.2005.1469256