The impact of the carrier transport on the random dopant induced drain current variation in the saturation regime of advanced strained-silicon CMOS devices

E. R. Hsieh*, Steve S. Chung, C. H. Tsai, R. M. Huang, C. T. Tsai, C. W. Liang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The variation of saturation drain current (I d,sat), induced by the random dopant variation (RDF), has been extensively studied by a new multivariate analysis method. It was found that the variation of I d,sat is originated from V th,sat and saturation velocity (V sat), while the variation of V th,sat comes from the drain induced barrier lowering (DIBL). However, the experimental results shows that V sat dominates the variation of I d,sat. From the transport theory, V sat is further decomposed into V inj and B sat, showing that V inj is the dominant factor of I d,sat variation. The faster the V inj is, the less the I d,sat variation becomes. If one improves the injection velocity, then the variation of I d,sat can be suppressed. This has been one of the significant benefits of strained silicon technology in CMOS device scaling.

Original languageEnglish
Title of host publication2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012
DOIs
StatePublished - 12 Oct 2012
Event2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 - Honolulu, HI, United States
Duration: 10 Jun 201211 Jun 2012

Publication series

Name2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

Conference

Conference2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012
CountryUnited States
CityHonolulu, HI
Period10/06/1211/06/12

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