In this paper, we present new results on the width dependent hot-carrier (HC) reliabilities for shallow-trench-isolated (STI) pMOSFETs in a multiple oxide CMOS technology. For the first time, different phenomena in pMOSFET for a multiple oxide process have been observed. Extensive studies have been made for ALD grown and plasma treated oxide pMOSFETs. Experimental data shows that the drain current degradation is enhanced for a reducing gate width. For thick oxide, the I D degradation is due to the channel length shortening, and electron trap is dominant for the device degradation. While for thin gate oxide, the I D degradation is due to width narrowing, and hole trap is dominant, in which both electron and hole trap induced V T shifts are significant, The degradation in thick-oxide pMOSFETs causes an increase of off-state leakage current and an increase of ΔV T in thin-oxide with reduced width.
|Number of pages||4|
|State||Published - 1 Dec 2004|
|Event||Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan|
Duration: 5 Jul 2004 → 8 Jul 2004
|Conference||Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004|
|Period||5/07/04 → 8/07/04|