The impact of scaling on volume inversion in symmetric double-gate MOSFETs

C. H. Lin; J. He; X. Xi; H. Kam; A. M. Niknejad; M. Chan; Chen-Ming Hu

doi:10.1109/ISDRS.2003.1272036

The impact of scaling on volume inversion in symmetric double-gate MOSFETs

C. H. Lin, J. He, X. Xi, H. Kam, A. M. Niknejad, M. Chan, Chen-Ming Hu

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

As CMOS technology is fast moving toward the scaling limit, double-gate (DG) MOSFETs are considered the most promising structure to suppress the short channel effect for a given equivalent gate oxide thickness by using two gates to control the channel [1], One of the specific operation merits of symmetric DG (SDG) devices is volume inversion in the whole silicon film biased at the subthreshold region [2]. Carrier mobility and source/drain transport are enhanced via volume inversion in SDG MOSFETs. Although the one-dimensional Poisson solutions to charge and surface potential solution in the silicon film were derived for intrinsic (or lightly-doped) DG MOSFETs [3], the dependences of channel doping, channel thickness, and gate length on charge and surface potential are still unclear. In this paper, 2-D and 3-D DG structure are simulated by an ISE device simulator.

Original language	English
Title of host publication	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	148-149
Number of pages	2
ISBN (Electronic)	0780381394, 9780780381391
DOIs	https://doi.org/10.1109/ISDRS.2003.1272036
State	Published - 1 Jan 2003
Event	International Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States Duration: 10 Dec 2003 → 12 Dec 2003

Publication series

Name	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Conference

Conference	International Semiconductor Device Research Symposium, ISDRS 2003
Country	United States
City	Washington
Period	10/12/03 → 12/12/03

Access to Document

10.1109/ISDRS.2003.1272036

Link to publication in Scopus

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Lin, C. H., He, J., Xi, X., Kam, H., Niknejad, A. M., Chan, M., & Hu, C-M. (2003). The impact of scaling on volume inversion in symmetric double-gate MOSFETs. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings (pp. 148-149). [1272036] (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2003.1272036

Lin, C. H. ; He, J. ; Xi, X. ; Kam, H. ; Niknejad, A. M. ; Chan, M. ; Hu, Chen-Ming. / The impact of scaling on volume inversion in symmetric double-gate MOSFETs. 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 148-149 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).

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abstract = "As CMOS technology is fast moving toward the scaling limit, double-gate (DG) MOSFETs are considered the most promising structure to suppress the short channel effect for a given equivalent gate oxide thickness by using two gates to control the channel [1], One of the specific operation merits of symmetric DG (SDG) devices is volume inversion in the whole silicon film biased at the subthreshold region [2]. Carrier mobility and source/drain transport are enhanced via volume inversion in SDG MOSFETs. Although the one-dimensional Poisson solutions to charge and surface potential solution in the silicon film were derived for intrinsic (or lightly-doped) DG MOSFETs [3], the dependences of channel doping, channel thickness, and gate length on charge and surface potential are still unclear. In this paper, 2-D and 3-D DG structure are simulated by an ISE device simulator.",

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Lin, CH, He, J, Xi, X, Kam, H, Niknejad, AM, Chan, M & Hu, C-M 2003, The impact of scaling on volume inversion in symmetric double-gate MOSFETs. in 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings., 1272036, 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 148-149, International Semiconductor Device Research Symposium, ISDRS 2003, Washington, United States, 10/12/03. https://doi.org/10.1109/ISDRS.2003.1272036

The impact of scaling on volume inversion in symmetric double-gate MOSFETs. / Lin, C. H.; He, J.; Xi, X.; Kam, H.; Niknejad, A. M.; Chan, M.; Hu, Chen-Ming.

2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 148-149 1272036 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Lin, C. H.

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AU - Xi, X.

AU - Kam, H.

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AU - Chan, M.

AU - Hu, Chen-Ming

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AB - As CMOS technology is fast moving toward the scaling limit, double-gate (DG) MOSFETs are considered the most promising structure to suppress the short channel effect for a given equivalent gate oxide thickness by using two gates to control the channel [1], One of the specific operation merits of symmetric DG (SDG) devices is volume inversion in the whole silicon film biased at the subthreshold region [2]. Carrier mobility and source/drain transport are enhanced via volume inversion in SDG MOSFETs. Although the one-dimensional Poisson solutions to charge and surface potential solution in the silicon film were derived for intrinsic (or lightly-doped) DG MOSFETs [3], the dependences of channel doping, channel thickness, and gate length on charge and surface potential are still unclear. In this paper, 2-D and 3-D DG structure are simulated by an ISE device simulator.

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Lin CH, He J, Xi X, Kam H, Niknejad AM, Chan M et al. The impact of scaling on volume inversion in symmetric double-gate MOSFETs. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 148-149. 1272036. (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). https://doi.org/10.1109/ISDRS.2003.1272036