The impact of scaling on volume inversion in symmetric double-gate MOSFETs

C. H. Lin, J. He, X. Xi, H. Kam, A. M. Niknejad, M. Chan, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

As CMOS technology is fast moving toward the scaling limit, double-gate (DG) MOSFETs are considered the most promising structure to suppress the short channel effect for a given equivalent gate oxide thickness by using two gates to control the channel [1], One of the specific operation merits of symmetric DG (SDG) devices is volume inversion in the whole silicon film biased at the subthreshold region [2]. Carrier mobility and source/drain transport are enhanced via volume inversion in SDG MOSFETs. Although the one-dimensional Poisson solutions to charge and surface potential solution in the silicon film were derived for intrinsic (or lightly-doped) DG MOSFETs [3], the dependences of channel doping, channel thickness, and gate length on charge and surface potential are still unclear. In this paper, 2-D and 3-D DG structure are simulated by an ISE device simulator.

Original languageEnglish
Title of host publication2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages148-149
Number of pages2
ISBN (Electronic)0780381394, 9780780381391
DOIs
StatePublished - 1 Jan 2003
EventInternational Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States
Duration: 10 Dec 200312 Dec 2003

Publication series

Name2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Conference

ConferenceInternational Semiconductor Device Research Symposium, ISDRS 2003
CountryUnited States
CityWashington
Period10/12/0312/12/03

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    Lin, C. H., He, J., Xi, X., Kam, H., Niknejad, A. M., Chan, M., & Hu, C-M. (2003). The impact of scaling on volume inversion in symmetric double-gate MOSFETs. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings (pp. 148-149). [1272036] (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2003.1272036