@inproceedings{9f2c5b72df424f718d67e5e1a7d0e3d2,
title = "The impact of scaling on volume inversion in symmetric double-gate MOSFETs",
abstract = "As CMOS technology is fast moving toward the scaling limit, double-gate (DG) MOSFETs are considered the most promising structure to suppress the short channel effect for a given equivalent gate oxide thickness by using two gates to control the channel [1], One of the specific operation merits of symmetric DG (SDG) devices is volume inversion in the whole silicon film biased at the subthreshold region [2]. Carrier mobility and source/drain transport are enhanced via volume inversion in SDG MOSFETs. Although the one-dimensional Poisson solutions to charge and surface potential solution in the silicon film were derived for intrinsic (or lightly-doped) DG MOSFETs [3], the dependences of channel doping, channel thickness, and gate length on charge and surface potential are still unclear. In this paper, 2-D and 3-D DG structure are simulated by an ISE device simulator.",
author = "Lin, {C. H.} and J. He and X. Xi and H. Kam and Niknejad, {A. M.} and M. Chan and Chen-Ming Hu",
year = "2003",
month = jan,
day = "1",
doi = "10.1109/ISDRS.2003.1272036",
language = "English",
series = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "148--149",
booktitle = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",
address = "United States",
note = "null ; Conference date: 10-12-2003 Through 12-12-2003",
}