The impact of pre/post-metal deposition annealing on negative-bias-temperature instability in HfO2 stack p-channel metal-oxide-semiconductor field effect transistors

Ying Hsin Lu, Ting Chang Chang, Szu Han Ho, Ching En Chen, Jyun Yu Tsai, Kuan Ju Liu, Xi Wen Liu, Tseung Yuen Tseng, Osbert Cheng, Cheng Tung Huang, Ching Sen Lu

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

This study investigates the impact of pre/post-metal deposition annealing on negative-bias-temperature instability (NBTI) in HfO2 stack p-channel metal-oxide-semiconductor field effect transistors (MOSFETs). In the initial electrical characteristics, the most apparent difference is threshold voltage (Vth) resulting from the work-function difference between the gate material and the semiconductor. Furthermore, fast I-V measurements indicate that the device with post-metal deposition annealing shows more degradation of Vth in NBTI, which originates from the more nitrogen interstitial defects in HfO2. This phenomenon is confirmed to be due to the process-related pre-existing defects by an analysis of double sweep fast I-V measurements.

Original languageEnglish
Pages (from-to)Q37-Q39
JournalECS Solid State Letters
Volume4
Issue number8
DOIs
StatePublished - 1 Jan 2015

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