The impact of microstructure and defects on moisture resistance of novel SiO x N y passivation layer for OLED applications

Yi Jen Chen*, Kuo Yuan Hsu, Yin Ying Chen, Cheng Feng Su, Shuenn Jiun Tang, Leu-Jih Perng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of grain boundaries in passivation layer and Al hillocks on moisture resistance were studied for SiO x N y thin films deposited by modified Ar ion beam evaporation. Al hillocks are attributed to be the culprit for moisture permeation, while its density and height dictate the required number layers of passivation for OLED applications.

Original languageEnglish
Title of host publicationIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
Pages280-283
Number of pages4
StatePublished - 1 Dec 2007
EventInternational Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan
Duration: 3 Jul 20076 Jul 2007

Publication series

NameIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC 2007
CountryTaiwan
CityTaipei
Period3/07/076/07/07

Fingerprint Dive into the research topics of 'The impact of microstructure and defects on moisture resistance of novel SiO <sub>x</sub> N <sub>y</sub> passivation layer for OLED applications'. Together they form a unique fingerprint.

  • Cite this

    Chen, Y. J., Hsu, K. Y., Chen, Y. Y., Su, C. F., Tang, S. J., & Perng, L-J. (2007). The impact of microstructure and defects on moisture resistance of novel SiO x N y passivation layer for OLED applications. In IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings (pp. 280-283). (IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings).