The Impact of Layout Dependent Intrinsic Parasitic RLC on High Frequency Performance in 3T and 4T Multi-finger nMOSFETs

Jyh-Chyurn Guo, Jyun Rong Ou, Jinq Min Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new observation of significant differences in the high frequency device parameters and performance like fT and fMAX is identified from the comparison of 3-terminal (3T) and 4-terminal (4T) multi-finger (MF) nMOSFETs. Through an extensive characterization on the intrinsic Z- and Y-parameters, it is found that the major impact comes from the particular increase of intrinsic parasitic resistances and inductances at the source terminal, namely Rs, int and Ls, int in the 4T MF MOSFETs. The proposed analytical models as a function of key device parameters incorporating the influence of the intrinsic parasitic RLC through high frequencies can accurately predict fT and fMAX degradation in 4T MF nMOSFETs as well as the complicated layout dependent effects. The experimental results and analytical models can be useful to facilitate MF devices layout optimization for high frequency design and performance improvement.

Original languageEnglish
Title of host publication2019 IEEE MTT-S International Microwave Symposium, IMS 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages963-966
Number of pages4
ISBN (Electronic)9781728113098
DOIs
StatePublished - 1 Jun 2019
Event2019 IEEE MTT-S International Microwave Symposium, IMS 2019 - Boston, United States
Duration: 2 Jun 20197 Jun 2019

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2019-June
ISSN (Print)0149-645X

Conference

Conference2019 IEEE MTT-S International Microwave Symposium, IMS 2019
CountryUnited States
CityBoston
Period2/06/197/06/19

Keywords

  • fMAX
  • fT
  • High frequency
  • intrinsic parasitic RLC
  • layout dependent effects.
  • MOSFET
  • multi-finger

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    Guo, J-C., Ou, J. R., & Lin, J. M. (2019). The Impact of Layout Dependent Intrinsic Parasitic RLC on High Frequency Performance in 3T and 4T Multi-finger nMOSFETs. In 2019 IEEE MTT-S International Microwave Symposium, IMS 2019 (pp. 963-966). [8700891] (IEEE MTT-S International Microwave Symposium Digest; Vol. 2019-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWSYM.2019.8700891