The impact of layout dependent effects on mobility and flicker noise in nanoscale multifinger nMOSFETs for RF and analog design

Jyh-Chyurn Guo, Yi Zen Lo, Jyun Rong Ou

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

The impact of layout dependent effects on multi-finger (MF) device parameters, such as transconductance (gm), effective mobility (μeff), source resistance (RS), and flicker noise was investigated in this paper to facilitate RF and analog optimization design. MF devices with wide poly-to-poly (PO-PO) space can achieve higher μeff and two-end source line layout can effectively reduce RS to improve gm. However, the wide PO-PO space yielding higher μeff cannot ensure lower flicker noise in nMOSFETs, which is dominated by number fluctuation model.

Original languageEnglish
Title of host publication2016 IEEE MTT-S International Microwave Symposium, IMS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509006984
DOIs
StatePublished - 9 Aug 2016
Event2016 IEEE MTT-S International Microwave Symposium, IMS 2016 - San Francisco, United States
Duration: 22 May 201627 May 2016

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2016-August
ISSN (Print)0149-645X

Conference

Conference2016 IEEE MTT-S International Microwave Symposium, IMS 2016
CountryUnited States
CitySan Francisco
Period22/05/1627/05/16

Keywords

  • effective mobility
  • flicker noise
  • Layout dependent effects
  • multi-finger
  • nMOSFET

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